Optical Science and Engineering ETDs
Publication Date
Fall 12-12-2024
Abstract
This dissertation demonstrates high-quality germanium quantum wells on a 200 mm silicon wafer platform, enabling novel device possibilities. Partnering with a commercial silicon-germanium epitaxy supplier, we obtained shallow, undoped germanium quantum wells with high-crystalline quality, confirmed through x-ray diffraction, secondary ion mass spectroscopy, high-resolution scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. Hall bar devices fabricated on single quantum wells revealed that surface preparation can tune transport properties while maintaining peak mobilities around 105 cm2V−1s−1. Manganese-germanide spintronic contacts were integrated via solid-state reaction, with contact quality assessed through Schottky diodes, transfer length method devices, and Hall bars. These findings highlight the potential for advanced spintronic and quantum devices, emphasizing the importance of surface preparation and integration techniques in optimizing device performance.
Degree Name
Optical Science and Engineering
Level of Degree
Doctoral
Department Name
Optical Science and Engineering
First Committee Member (Chair)
Prof. Marek Osinski
Second Committee Member
Prof. Payman Zarkesh-Ha
Third Committee Member
Dr. Sadhvikas Addamane
Fourth Committee Member
Dr. Tzu-Ming Lu
Keywords
Ge/SiGe quantum wells, transport, spintronics, quantum computing, spin qubits
Document Type
Dissertation
Language
English
Recommended Citation
Hutchins-Delgado, Troy Alexander. "Ge/SiGe Quantum Wells: Material for the Post-Moore Era." (2024). https://digitalrepository.unm.edu/ose_etds/105
Included in
Condensed Matter Physics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Nanoscience and Nanotechnology Commons, Nanotechnology Fabrication Commons, Other Engineering Commons, Semiconductor and Optical Materials Commons
