Optical Science and Engineering ETDs
Publication Date
Spring 3-5-2024
Abstract
This thesis explores the monolithic integration of antimonide based narrow bandgap semiconductors on commercially available substrates for mid-wave infrared (MWIR) devices. The research focuses on the integration and growth of antimonide based alloys using the interfacial misfit dislocation (IMF) arrays to enhance the cost efficiency, manufacturability and performance. The study particularly investigates the relaxation mechanisms of antimonide alloys on InAs and InP substrates, assessing the impact of mismatch strain on the quality of epilayers. The IMF arrays are examined using high-resolution transmission electron microscopy (HR-TEM) and x-ray diffraction (XRD), revealing information about the effective strain relief mechanisms behind IMF arrays and the impact on crystal quality of the buffer. This investigation aims to advance the understanding of ternary alloys grown on highly mismatched substrates, offering the integration of more reliable and cost-effective III-V based MWIR devices by comparing current findings with existing literature on metamorphic buffers and antimonide-based technologies.
Degree Name
Optical Science and Engineering
Level of Degree
Doctoral
Department Name
Optical Science and Engineering
First Committee Member (Chair)
Ganesh Balakrishnan
Second Committee Member
Thomas J. Rotter
Third Committee Member
Sang Han
Fourth Committee Member
Sadhvikas Addamane
Keywords
Molecular Beam Epitaxy, antimonide alloys, Interfacial Misfit dislocations, MWIR detection, heteroepitaxy
Document Type
Dissertation
Language
English
Recommended Citation
Ince, Fatih Furkan. "MBE Growth of Sb based Alloys Using Interfacial Misfit Arrays for MWIR Devices." (2024). https://digitalrepository.unm.edu/ose_etds/101
