Modeling the Scaling Effects of Electromagnetic Interference on MOSFETs
Start Date
8-11-2017 1:30 PM
End Date
8-11-2017 5:30 PM
Abstract
Extreme Electromagnetic Interference (EEMI) is a form of electromagnetic wave stimulus with frequencies ranging from 100 MHz to 100 GHz and electric field values between 1-100 kV/m. EEMI can adversely affect electronic circuits and cause it to malfunction or even be destroyed. The severity of EEMI can be determined as soft upsets and hard upsets. We are proposing an on-set of soft upsets using a novel method for modeling and analyzing the effects of EEMI on an N-type Metal-Oxide Semiconductor (NMOS) transistor in a low frequency interference environment. Such on-sets, can help devices safely turn off before they are damaged by EEMI. The developed model, successfully characterizes gate injection of Radio Frequency (RF) interference in a MOSFET at low frequencies ranging from 10MHz to 100MHz and for the injected RF power of -20dBm to 18dBm. The proposed method will account for how EEMI adversely affects the NMOS in different regions of operation. Accuracy of the model can be verified by comparing the simulation results and experimental data on test chips fabricated on 350nm technology.
Modeling the Scaling Effects of Electromagnetic Interference on MOSFETs
Extreme Electromagnetic Interference (EEMI) is a form of electromagnetic wave stimulus with frequencies ranging from 100 MHz to 100 GHz and electric field values between 1-100 kV/m. EEMI can adversely affect electronic circuits and cause it to malfunction or even be destroyed. The severity of EEMI can be determined as soft upsets and hard upsets. We are proposing an on-set of soft upsets using a novel method for modeling and analyzing the effects of EEMI on an N-type Metal-Oxide Semiconductor (NMOS) transistor in a low frequency interference environment. Such on-sets, can help devices safely turn off before they are damaged by EEMI. The developed model, successfully characterizes gate injection of Radio Frequency (RF) interference in a MOSFET at low frequencies ranging from 10MHz to 100MHz and for the injected RF power of -20dBm to 18dBm. The proposed method will account for how EEMI adversely affects the NMOS in different regions of operation. Accuracy of the model can be verified by comparing the simulation results and experimental data on test chips fabricated on 350nm technology.
