Electrical and Computer Engineering ETDs

Publication Date

12-9-1972

Abstract

High mobility indium antimonide thin films were prepared using the electron-beam evaporation technique to permit study of thin-film structure and formation. Thin-film Hall devices and magnetoresistors were fabricated, and electron and stable fast neutron radiation effects on InSb films were studied. Gallium arsenide phosphide (GaAsP) and silicon MIS capacitors were fabricated by using aluminum oxide (Al0) and silicone oxide (SiO ). Tellurium thin-film transistors (TFTs) were also fabricated using electron-beam evaporated Al2o3 or the anodization of aluminum. The device stability was studied before and after thermal annealing in different gases.

Physical properties of InSb compound semiconductors were studied to gain understanding of the detailed mechanism of thin-film nucleation and growth. It was found that larger grain size resulted in high mobility films. High mobility InSb thin films were prepared using the electron-beam gun at a rate of 300 to 500 A/sec on precleaned glass substrates, maintained at 300°C, at a pressure of 2 to 3 x 10-torr. After being heated in an oven at 250°C for about 20 minutes, the films were recrystallized in a dry argon atmosphere (2 liters/min) between 520 and 535°C for 2 to 3 minutes. Electron mobility ranged from 40,000 to 68 ,000 cm /V-sec. For a two-layer thin-film Corbino disk, a magnetoresistance of 18 was obtained at 10 Kgauss.

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

Lewellyn Boatwright Jr

Third Committee Member

Harold Dean Southward

Fourth Committee Member

William Jackson Byatt

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