The Effect Of Nuclear Radiation On Oxidized Silicon Surfaces.

Author

Jerry A. Hood

Publication Date

12-12-1966

Abstract

The change in properties of oxidized silicon surfaces with nuclear radiation is most apparent in devices controlled from the surface. The two devices of most specific interest are the insulated gate field-effect transistor and the metal-silicon dioxide-silicon capacitor. This chapter reviews the basic operating theory of these devices excluding the radiation induced defects. Many other devices such as the fieldister and surface-controlled avalanche devices would be equally or more sensitive than the two devices chosen for study. The devices chosen, however, are those of most immediate interest for use in a nuclear radiation environment .

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

William Jackson Byatt

Third Committee Member

Harold Dean Southward

Fourth Committee Member

Christopher Pratt Leavitt

Recommended Citation

Hood, Jerry A.. "The Effect Of Nuclear Radiation On Oxidized Silicon Surfaces.." (1966). https://digitalrepository.unm.edu/ece_etds/744