A General Approach to the Analysis of Particle Transport in Solids--with Particular Application to High Frequency Effects on Charge Transport in Semiconductor Devices

Author

Raymond A. Gore

Publication Date

5-11-1966

Abstract

The purpose of this first chapter is to review the basis of the diffusion theory description of particle motion in solid material and its application in the analysis of semiconductor devices. Diffusion theory, as used throughout this dissertation, will be used to mean the special case of the more rigorous transport theory that results from assuming an infinite particle velocity and a constant ratio of particle velocity to the probability of a collision. Thus, the discussion of diffusion theory begins with transport theory, and in particular with the Boltzmann transport equation. Therefore, this chapter begins with a formulation of the Boltzmann equation which is then shown to lead to the diffusion equation when the necessary limitations are imposed.

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

William Jackson Byatt

Second Committee Member

Wayne Willis Grannemann

Third Committee Member

Harold Dean Southward

Recommended Citation

Gore, Raymond A.. "A General Approach to the Analysis of Particle Transport in Solids--with Particular Application to High Frequency Effects on Charge Transport in Semiconductor Devices." (1966). https://digitalrepository.unm.edu/ece_etds/733