Electrical and Computer Engineering ETDs
Publication Date
5-25-1961
Abstract
Single Crystal Rutile TiO2 upon reduction by heating in an atmosphere of hydrogen becomes a semiconductor, and the conductivity increases with the time and temperature of reduction. The reduction process creates oxygen vacancies with which there are associated two loosely bound electrons. These electrons may be raised to the conduction band by thermal excitation. Hence, an oxygen vacancy behaves like an impurity donor site.
Document Type
Thesis
Language
English
Degree Name
Electrical Engineering
Level of Degree
Masters
Department Name
Electrical and Computer Engineering
First Committee Member (Chair)
N/A
Second Committee Member
Ruben D. Kelly
Third Committee Member
E.F. Jordan
Recommended Citation
Davis, Goebel Jr.. "Theory and Fabrication of Point Contact Diodes Utilizing Reduced Single Crystal Rutile TiO2." (1961). https://digitalrepository.unm.edu/ece_etds/292