Electrical and Computer Engineering ETDs
Publication Date
Spring 4-25-1961
Abstract
With the advent of the transistor in the late 1940's have come an entirely new field of engineering and a greatly renewed interest in solid state physics. This paper will be concerned in general with the electrical properties of these materials, and specifically drift mobility of the minority carriers in n-type germanium. The minority carrier in n-type material is the hole. The definition of drift mobility is: the mean carrier velocity per unit electric field.
Keywords
Drift Mobility, n-Type Germanium, Transistors
Sponsors
Sandia Corporation, Los Alamos Scientific Laboratory
Document Type
Thesis
Language
English
Degree Name
Electrical Engineering
Level of Degree
Masters
Department Name
Electrical and Computer Engineering
First Committee Member (Chair)
W.W. Garmermann
Second Committee Member
None
Third Committee Member
None
Recommended Citation
Closser, William H.. "A Study of Drift Mobility in Neutron Irradiated n-Type Germanium." (1961). https://digitalrepository.unm.edu/ece_etds/289
