Optical Science and Engineering ETDs
Publication Date
Summer 7-30-2024
Abstract
The focus of this work was to create a process to fabricate an InP-based Photonic Integrated Circuit (PIC). The design of the PIC required the photonic components of this device to be created by deep etching of an epitaxially-grown multilayer structure. Therefore, a novel dry etching process was developed to produce very high aspect- ratio (HAR) features. This process not only involved the development of dry etch chemistry but also the engineering of a metal mask structure. The next step of the challenge was to use a polymer-based material that would have two functions: cladding for the etched photonic components and a stable mechanical structure that would support the electrical fanouts. A novel scheme was engineered to apply SU-8 as the polymer that fulfills both roles and helps to realize functioning devices. Characterization was performed on the device to verify the basic functionality.
Degree Name
Optical Science and Engineering
Level of Degree
Doctoral
Department Name
Optical Science and Engineering
First Committee Member (Chair)
Marek Osinski
Second Committee Member
Francesca Cavallo
Third Committee Member
Ganesh Balakrishnan
Fourth Committee Member
Nathan Jackson
Keywords
photonic integrated circuits, PIC, monolithic integration, InP, InGaAs, MQW
Sponsors
Office of Naval Research
Document Type
Dissertation
Language
English
Recommended Citation
Nazib, Sami A.. "FABRICATION AND CHARACTERIZATION OF A MONOLITHIC PHOTONIC INTEGRATED CIRCUIT WITH HIGH-ASPECT RATIO PHOTONIC DEVICE STRUCTURES." (2024). https://digitalrepository.unm.edu/ose_etds/102
Included in
Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Nanoscience and Nanotechnology Commons, Nanotechnology Fabrication Commons, Other Engineering Commons, Semiconductor and Optical Materials Commons
