Investigation Of Electron-Beam Deposited Titanium Dioxide On Silicon For Application In Mos Devices

Author

William David Brown

Publication Date

7-21-1975

Abstract

Titanium dioxide (Ti02) has been studied to determine the feasibility of using this dielectric material in Metal-Insulator-Semiconductor (MIS) structures. MIS structures utilizing various dielectric materials have received considerable attention in recent years. Materials such as titanium dioxide which exhibit a high permittivity are attractive as insulators in MIS devices because of high capacitive density, good surface control for thick films, large power handling capability, and reduction in device size.

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

Harold Dean Southward

Third Committee Member

Roy Arthur Colclaser

Recommended Citation

Brown, William David. "Investigation Of Electron-Beam Deposited Titanium Dioxide On Silicon For Application In Mos Devices." (1975). https://digitalrepository.unm.edu/ece_etds/675