Predicting Current Gain Degradation in NPN Silicon Transistors After Irradiation by High-Energy Neutrons

Author

Jerry A. Hood

Publication Date

4-29-1964

Abstract

The damage discussed in this report is permanent and remains after all transient ionization has decayed. The damage which predominantly affects the electrical characteristics of a transistor is the creation of "vacancies" and "interstitials" in the lattice structure. These defects are created when an atom is knocked from its position and leaves a vacancy in the lattice. The atom comes to rest in a position out of the lattice structure and is known as interstitial. These atoms are knocked from their positions by the irradiating neutrons or by an interstitial traveling through the crystal. These defects occur in localized clusters around the primary knock-on point. Other effects such as thermal spikes and transmutation of the crystal atoms have a higher order effect on the electrical characteristics of the crystal and are neglected.

Document Type

Thesis

Language

English

Degree Name

Electrical Engineering

Level of Degree

Masters

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

Harold Dean Southward

Third Committee Member

Arnold Herman Koschmann

Recommended Citation

Hood, Jerry A.. "Predicting Current Gain Degradation in NPN Silicon Transistors After Irradiation by High-Energy Neutrons." (1964). https://digitalrepository.unm.edu/ece_etds/599