Electrical and Computer Engineering ETDs
Publication Date
4-16-1971
Abstract
A statistical theory of avalanche breakdown in silicon is presented, based on the conventional Boltzmann transport equation. The scattering mechanisms considered are impact ionization (electron-hole pair production), phonon emission and absorption, thermal generation and recombination. The resultant critical field is found to depend on the recombination statistics, which were ignored in previous theories of avalanche breakdown. The theoretical temperature dependence is compared with the temperature dependence of the breakdown voltages of three conunercial diodes.
Document Type
Dissertation
Language
English
Degree Name
Electrical Engineering
Level of Degree
Doctoral
Department Name
Electrical and Computer Engineering
First Committee Member (Chair)
Wayne Willis Grannemann
Second Committee Member
William J. Byatt
Third Committee Member
Harold D. Southward
Recommended Citation
Sewards, Terence Vincent. "A Statistical Theory of Avalanche Breakdown in Silicon." (1971). https://digitalrepository.unm.edu/ece_etds/470