Electrical and Computer Engineering ETDs

Publication Date

2-9-1968

Abstract

The theory of operation of the Schottky barrier diode was reviewed. The complications caused by a more accurate space charge formulation were discussed. Consideration of image effects, tunneling, interfacial dielectric layers, surface states, and minority carrier current was also included.

The interaction of ionizing radiation with semiconducting materials was reviewed. The behavior of a Schottky barrier diode in an ionizing radiation environment was considered. The resultant model for the Schottky barrier diode is analogous to a p-n diode with one side having a very high dopant concentration.

Tests were performed upon GaAs and silicon Schottky barrier diodes, using a 2 mev flash X-ray machine. The GaAs Schottky barrier diodes were tested while functioning as an X-band detector and mixer. No permanent change was observed in the voltage-current characteristic, capacitance-voltage characteristic, or noise figure of the diodes after irradiation. Diodes fabricated from both types of materials were also tested in a more conventional DC bias circuit.

Both types of diode were exposed to a mixed neutron gamma pulse at the Sandia Pulsed Reactor II. Neutron fluences up to 5 x 1014 nvt and gamma dose rates up to 109 R/sec were obtained. The diodes showed very minor changes in voltage current characteristics for a total neutron fluence up to 1.2 x 1015 nvt.

Sponsors

Air Force Weapons Laboratory, Kirtland Air Force Base

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Harold D. Southward

Second Committee Member

William Jackson Byatt

Third Committee Member

Wayne Willis Grannemann

Third Advisor

Christopher Pratt Leavitt

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