Electrical and Computer Engineering ETDs

Publication Date

5-5-1972

Abstract

This report is concerned with the feasibility of using the micro-Hall device, introduced by Colclaser and Southward, as a tool for determining important electrical characteristics of epitaxial silicon at low temperatures. The theory of carrier concentration and mobility as a function of temperature in the low temperature range is presented. A contact diffusion mask is introduced which eliminates the formation of an unwanted junction at the substrate contacts and aids in the formation of ohmic contacts. The refrigerator (cryo-tip) used to obtain low temperatures and a special designed specimen holder which connects to the cryo-tip are described.

Document Type

Thesis

Degree Name

Electrical Engineering

Level of Degree

Masters

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Harold D. Southward

Second Committee Member

Wayne Willis Grannemann

Third Committee Member

Roy Arthur Colclaser

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