Electrical and Computer Engineering ETDs
Publication Date
Spring 4-14-2017
Abstract
Physical unclonable functions (PUFs) are security primitives that exploit the device mismatches. PUFs are a promising solution for hardware cryptography and key storage. They are used in many security applications including identification, authentication and key generation. SRAM is one of the popular implementations of PUFs. SRAM PUFs offer the advantage, over other PUF constructions, of reusing resources (memories) that already exist in many designs.
In this thesis, for the first time, it is demonstrated that the start-up value of an SRAM PUF could be different depending on the SRAM power supply rising time. An analytical model has been developed to determine the range for the power supply ramp time that affects the SRAM PUF start-up value. It has been found that there are two regions of operation. The generated key could possibly be different from one region to another. An SRAM test chip was designed and fabricated using Tower Jazz’s 180 nanometer Silicon Germanium (SiGe) Bipolar/CMOS (BiCMOS) process. Based on our vii measured data, using the appropriate rising time can decrease the number of flipping bits by 5%. Both simulation and silicon results confirms the analytical model.
Keywords
Physical Unclonable Functions, SRAM PUF, Power Supply ramp time, SRAM cell start-up value, Hardware Security
Document Type
Thesis
Language
English
Degree Name
Electrical Engineering
Level of Degree
Masters
Department Name
Electrical and Computer Engineering
First Committee Member (Chair)
Payman Zarkesh-Ha
Second Committee Member
James Plusquellic
Third Committee Member
James Aarestad
Third Advisor
Payman Zarkesh-Ha
Recommended Citation
Elshafiey, Abdelrahman T. Mr.. "THE EFFECT OF POWER SUPPLY RAMP TIME ON SRAM PUF's." (2017). https://digitalrepository.unm.edu/ece_etds/342
Included in
Electrical and Electronics Commons, Electronic Devices and Semiconductor Manufacturing Commons, VLSI and Circuits, Embedded and Hardware Systems Commons