Electrical and Computer Engineering ETDs

Publication Date

9-9-2007

Abstract

The performance of microelectronics in a radiation environment is an important concern for defense and space applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the increase in recombination rate degrades the current gain. Two approaches were taken in the development of a compact BJT model that include the effects of static neutron damage. One approach is based on the Gummel-Poon term for recombination current. The other approach is based on the Shockley-Read-Hall theory of recombination. Simulation results of the BJT neutron-effects model compare favorably with measured data of BJT test structures. Application of the neutron-effects BJT model in a voltage reference circuit provides critical information for circuit design in a neutron environment.

Keywords

Microelectronics

Sponsors

Sandia National Laboratories

Document Type

Thesis

Language

English

Degree Name

Electrical Engineering

Level of Degree

Masters

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Hembree, Charles

Second Committee Member

Gilmore, Mark

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