Physics & Astronomy ETDs

Publication Date

Fall 12-16-2023


Our first focus is on few-hole quantum dots in germanium. We use discontinous Galerkin methods to discretize and solve the equations of a highly detailed k·p model that describes these systems, enabling a better understanding of experimental magnetospectroscopy results. We confirm the expected anisotropy of single-hole g-factors and describe mechanisms by which different orbital states have different g-factors. Building on this, we show that the g-factors in Ge holes are suciently sensitive to details of the device electrostatics that magnetospectroscopy data can be used to make a prediction of the underlying confinement potential. The second focus is on designing quantum dot systems for the analog quantum simulations of impurity models. This involves implementing new methods for calculating the properties of open systems and a proposal for measuring impurity Hamiltonian parameters. The final focus is on using Green’s function methods to explore the transport properties of donor arrays fabricated using atomic-precision advanced manufacturing. We simulate bias spectroscopy experiments on a one-dimensional chain of phosphorus donor atoms in silicon, and the manner in which experimental signatures change in the presence of experimentally-corroborated imperfect dopant incorporation.

Degree Name


Level of Degree


Department Name

Physics & Astronomy

First Committee Member (Chair)

Susan Atlas

Second Committee Member

Andrew Baczewski

Third Committee Member

Ivan Deutsch

Fourth Committee Member

David Dunlap




quantum dot, quantum computing, semiconductor physics, germanium, donors, computational modeling

Document Type