Electrical and Computer Engineering ETDs

Publication Date

Spring 4-1-2025

Abstract

Optical transceivers are desirable for their galvanic isolation and natural immunity to electromagnetic interference compared with direct electrical connections. This is true in normal operating environments as well as radiation environments. This work realizes and characterizes GaAs HBT-based optical transceivers across temperature and a range of radiation environments including high dose rate, total ionizing dose, neutron, and heavy ion. The transceiver designs are discussed and specific environmental design considerations are highlighted. Final results for each environment are provided and compared with existing transceivers.

Keywords

Transceiver, Radiation, Integrated Circuit, Heterojunction bipolar transistor

Sponsors

Sandia National Laboratories

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Dr. Payman Zarkesh-Ha

Second Committee Member

Dr. Rafmag Cabrera

Third Committee Member

Dr. Ganesh Balakrishnan

Fourth Committee Member

Dr. Tito Busani

Comments

  • Added approval page.
  • Replaced "Electrical Engineering" with "Engineering" on title and abstract pages
  • Moved table on page 116 to top of page (that was the best I could do with the Latex template).
  • Compressed file to a smaller size.

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