This manuscript details the modeling performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for both cases as 7.27 and 1.22 years, respectively.
IGBT, rainflow, solar, inverter, photovoltaic, lifetime, irradiance
Level of Degree
Electrical and Computer Engineering
First Committee Member (Chair)
Second Committee Member
Borders, Richard A.. "Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis." (2016). https://digitalrepository.unm.edu/ece_etds/37