Electrical and Computer Engineering ETDs

S. Lee Hight

Publication Date

5-31-1968

Abstract

Magnetic control of carrier lifetime in semiconductors has been examined from a standpoint of applying this phenomenon to low-voltage, high-current switching devices. The continuity equation is extensively examined for intrinsic semiconductors, and limits are derived on the magnitude of the switching effects in terms of material parameters. Experiments have been conducted on undoped indium antimonide which tend to verify these limits. A cursory examination is made of the control of the lifetime of injected carriers. The indications are that this effect may be useful in a wider range of materials than the effect in intrinsic semiconductors.

Document Type

Thesis

Language

English

Degree Name

Electrical Engineering

Level of Degree

Masters

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

Harold Dean Southward

Third Committee Member

Harold A. Cates

Third Advisor

Illegible

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