Etched-and-Regrown Diodes on M-Plane GaN for Next Generation Power Electronic Devices

Author

Andrew A. Aragon, University of New MexicoFollow

Publication Date

Spring 5-5-2021

Abstract

Demand for next-generation power electronic devices is driven by continually evolving requirements of power systems. Devices utilizing III-nitride materials (GaN) and vertical selective-area doped architectures are advantageous due to their wide- bandgap, thermal management, small form-factor, and current handling.

Such devices incorporate junctions at multiple crystalline planes. Thus, effects of impurity contamination and etch damage are investigated on the m-plane (10-10) of GaN. Impurites (Si, O, and C) are shown to reduce blocking voltage (~ 10² ×) and increase forward leakage current (~ 10⁴ ×) in regrown versus continuously-grown p-n diodes. Elevated deep level defects at Ec – 1.9, 2.9, and 3.3 eV are identified with increased reverse leakage (~ 10³ ×) in etch-and-regrown versus continuously-grown Schottky diodes. Post-dry-etch methods are used to reduce defects and reverse current leakage (~ 10 – 10³ ×). Additionally, leakage current mechanisms are investigated via an RF method to extract dynamic parameters of etched-and-regrown p-n diodes

Keywords

GaN, p-n diode, high-power electronics, III-V semiconductor

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Dr. Daniel Feezell

Second Committee Member

Dr. Payman Zarkesh-Ha

Third Committee Member

Dr. Sang M. Han

Fourth Committee Member

Dr. Andrew Armstrong

Recommended Citation

Aragon, Andrew A.. "Etched-and-Regrown Diodes on M-Plane GaN for Next Generation Power Electronic Devices." (2021). https://digitalrepository.unm.edu/ece_etds/503