Nanoscience and Microsystems ETDs

Publication Date

Spring 5-1-2017


The growth of GaSb on GaAs is of interest for a variety of scientific and technological applications. Some evidence suggests that low threading dislocation density GaSb can be grown directly on GaAs through arrays of periodic edge misfit dislocations. However, significant conflicting data also exist. This work seeks to clarify the question through transmission electron microscopy analysis of GaSb grown on GaAs. The results of this work show that the single strategy of direct growth of GaSb on GaAs results in dislocation densities too high for devices. A secondary strategy of dislocation filtering layers is introduced to further reduce threading dislocations. Dislocation filtering layers are shown to be effective at bending threading dislocations at strained interfaces. Advanced analytical methods are employed to assist in developing a unique view of the dislocation filtering layer. These results enable a comprehensive evaluation of dislocation behavior extending the scientific understanding of this complex interface.


TEM, dislocations, GaSb

Document Type




Degree Name

Nanoscience and Microsystems

Level of Degree


Department Name

Nanoscience and Microsystems

First Committee Member (Chair)

Dr. Ganesh Balakrishnan

Second Committee Member

Dr. Sang Han

Third Committee Member

Dr. Daniel Feezell

Fourth Committee Member

Dr. Ying-Bing Jiang