Electrical and Computer Engineering ETDs

Publication Date

6-2-1967

Abstract

The performance of avalanche transistors and diodes was investigated under transient X-ray irradiation. The diode depletion and diffusion components of radiation induced photocurrent are related to known physical constants and measurable diode parameters. Additionally, the photocurrent was related to the avalanche phenomenon and incorporated in equivalent circuits. The peak value of the transient photocurrent increased up to the avalanche break­down voltage of the diode. An equivalent circuit is given for the region prior to breakdown, which indicates that this avalanche multiplied photocurrent can be inserted as a current generator across the function. After breakdown occurred and the reverse bias voltage was increased, the peak value of the photocurrent decreased. This phenomenon was related to the inherent voltage regulation properties of avalanche semiconductor devices. After breakdown, the induced ionization behaves more like a voltage source.

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

William Jackson Byatt

Third Committee Member

Christopher Pratt Leavitt

Fourth Committee Member

Harold Dean Southward

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