Electrical and Computer Engineering ETDs


Jerry A. Hood

Publication Date



The damage discussed in this report is permanent and remains after all transient ionization has decayed. The damage which predominantly affects the electrical characteristics of a transistor is the creation of "vacancies" and "interstitials" in the lattice structure. These defects are created when an atom is knocked from its position and leaves a vacancy in the lattice. The atom comes to rest in a position out of the lattice structure and is known as interstitial. These atoms are knocked from their positions by the irradiating neutrons or by an interstitial traveling through the crystal. These defects occur in localized clusters around the primary knock-on point. Other effects such as thermal spikes and transmutation of the crystal atoms have a higher order effect on the electrical characteristics of the crystal and are neglected.

Document Type




Degree Name

Electrical Engineering

Level of Degree


Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

Harold Dean Southward

Third Committee Member

Arnold Herman Koschmann