Electrical and Computer Engineering ETDs

Publication Date

Spring 5-5-2021


Demand for next-generation power electronic devices is driven by continually evolving requirements of power systems. Devices utilizing III-nitride materials (GaN) and vertical selective-area doped architectures are advantageous due to their wide- bandgap, thermal management, small form-factor, and current handling.

Such devices incorporate junctions at multiple crystalline planes. Thus, effects of impurity contamination and etch damage are investigated on the m-plane (10-10) of GaN. Impurites (Si, O, and C) are shown to reduce blocking voltage (~ 102 ×) and increase forward leakage current (~ 104 ×) in regrown versus continuously-grown p-n diodes. Elevated deep level defects at Ec – 1.9, 2.9, and 3.3 eV are identified with increased reverse leakage (~ 103 ×) in etch-and-regrown versus continuously-grown Schottky diodes. Post-dry-etch methods are used to reduce defects and reverse current leakage (~ 10 – 103 ×). Additionally, leakage current mechanisms are investigated via an RF method to extract dynamic parameters of etched-and-regrown p-n diodes


GaN, p-n diode, high-power electronics, III-V semiconductor

Document Type




Degree Name

Electrical Engineering

Level of Degree


Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Dr. Daniel Feezell

Second Committee Member

Dr. Payman Zarkesh-Ha

Third Committee Member

Dr. Sang M. Han

Fourth Committee Member

Dr. Andrew Armstrong