Electrical and Computer Engineering ETDs

Publication Date

4-16-1971

Abstract

A statistical theory of avalanche breakdown in silicon is presented, based on the conventional Boltzmann transport equation. The scattering mechanisms considered are impact ionization (electron-hole pair production), phonon emission and absorption, thermal generation and recombination. The resultant critical field is found to depend on the recombination statistics, which were ignored in previous theories of avalanche breakdown. The theoretical temperature dependence is compared with the temperature dependence of the breakdown voltages of three conunercial diodes.

Document Type

Dissertation

Language

English

Degree Name

Electrical Engineering

Level of Degree

Doctoral

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

William J. Byatt

Third Committee Member

Harold D. Southward

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