Single Crystal Rutile TiO2 upon reduction by heating in an atmosphere of hydrogen becomes a semiconductor, and the conductivity increases with the time and temperature of reduction. The reduction process creates oxygen vacancies with which there are associated two loosely bound electrons. These electrons may be raised to the conduction band by thermal excitation. Hence, an oxygen vacancy behaves like an impurity donor site.
Level of Degree
Electrical and Computer Engineering
First Committee Member (Chair)
Second Committee Member
Ruben D. Kelly
Third Committee Member
Davis, Goebel Jr.. "Theory and Fabrication of Point Contact Diodes Utilizing Reduced Single Crystal Rutile TiO2." (1961). https://digitalrepository.unm.edu/ece_etds/292