Variations in delay caused by within-die and die-to-die process variations and SOI history effect increase timing margins and reduce performance. In order to develop mitigation techniques to reduce the detrimental effects of delay variations, particularly those that occur within-die, new methods of measuring delay variations within actual products are needed. The data provided by such techniques can also be used for validating models, i.e., can assist with model-to-hardware correlation. In this research work, a method is proposed for a flush delay technique to measure both regional delay variations and SOI history effect. The method is then validated using a test structure fabricated in a 65 nm SOI process.
Delay faults (Semiconductors), Silicon-on-insulator technology.
National Science Foundation
Level of Degree
Electrical and Computer Engineering
First Committee Member (Chair)
Second Committee Member
Third Committee Member
Aarestad, James. "Characterizing within-die and die-to-die delay variations introduced By process variations and SOI history effect." (2011). https://digitalrepository.unm.edu/ece_etds/1