Safe Thermal Operation of Power Transistors Under Pulsed Excitation

Author

George R. Swain

Publication Date

11-12-1958

Abstract

One desires to find the relationship between thermal stability and such factors as temperature within the transistor, power dissipation in the transistor junctions, collector saturation current, and thermal resistance. In the approach set forth in this paper, the theory of solid state heat flow is applied to a simplified thermal model of a power transistor.

Sponsors

National Science Foundation

Document Type

Thesis

Language

English

Degree Name

Electrical Engineering

Level of Degree

Masters

Department Name

Electrical and Computer Engineering

First Committee Member (Chair)

Wayne Willis Grannemann

Second Committee Member

Arnold Herman Koschmann

Third Committee Member

Arthur Wilson Melloh

Recommended Citation

Swain, George R.. "Safe Thermal Operation of Power Transistors Under Pulsed Excitation." (1958). https://digitalrepository.unm.edu/ece_etds/384