For the purpose of this report, it is assumed that the behavior of the transistor can be predicted from the study of a suitable circuit model or equivalent circuit of the transistor. It is further assumed that, except for the intrinsic short-circuit current gain, the circuit parameters of he transistor are independent of frequency and temperature. The primary interest in the study of transistor distributed amplifier here is the amplitude of the voltage gain in the amplification of video frequencies. Somewhat less detailed studies are made of the distributed amplifier in band-pass applications.
Level of Degree
Electrical and Computer Engineering
First Committee Member (Chair)
Second Committee Member
Third Committee Member
Harper, Bill J.. "Transistor Distributed Amplifier." (1959). http://digitalrepository.unm.edu/ece_etds/329